PART |
Description |
Maker |
LSIC2SD120C05 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
BZX85C47GP BZX85C15GP BZX85C75GP BZX85C7V5GP BZX85 |
150 V, 2 mA, 1.3 W glass passivated zener diode SMALL SIGNAL SCHOTTKY DIODES 齐纳二极 5.0V PC real-time clock 齐纳二极 Low capacitance, low series inductance and resistance Schottky diodes Low capacitance small signal Schottky diodes Small signal Schotky diodes
|
Fagor Electronics Industry Public Company Limited Fairchild Semiconductor, Corp.
|
SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
SCS215AJ |
SiC Schottky Barrier Diode
|
Rohm
|